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參數(shù)資料
| 型號(hào)： | CA3146 |
| 廠商： | Intersil Corporation |
| 英文描述： | High-Voltage Transistor Arrays |
| 中文描述： | 高壓晶體管陣列 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 121K |
| 代理商： | CA3146 |
3
Magnitude of V
IO
(V
BE1
- V
BE2
)
Temperature Coefficient
V
CE
= 5V,
I
C1
= I
C2
= 1mA
-
-
1.1
-
-
1.1
-
μ
V/
o
C
Magnitude of Input Offset Current
|I
IO1
- I
IO2
| (CA3146AE and
CA3146E Only)
I
IO
V
CE
= 5V,
I
C1
= I
C2
= 1mA
8
-
0.3
2
-
0.3
2
μ
A
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
NF
f = 1kHz, V
CE
= 5V,
I
C
= 100
μ
A, Source
Resistance = 1k
10
-
3.25
-
-
3.25
-
dB
Low-Frequency, Small-Signal
Equivalent-Circuit Characteristics:
Forward-Current Transfer
Ratio
h
FE
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
12
-
100
-
-
100
-
-
Short-Circuit Input Impedance
h
IE
12
-
3.5
-
-
2.7
-
k
Open-Circuit Output Impedance
h
OE
12
-
15.6
-
-
15.6
-
μ
S
Open-Circuit Reverse Voltage
Transfer Ratio
h
RE
12
-
1.8 x
10
-4
-
-
1.8 x
10
-4
-
-
Admittance Characteristics:
Forward Transfer Admittance
Y
FE
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
V
CE
= 5V, I
C
= 3mA
V
EB
= 5V, I
E
= 0
V
CB
= 5V, I
C
= 0
V
Cl
= 5V, I
C
= 0
13
-
31-
j1.5
-
-
31-j1.5
-
mS
Input Admittance
Y
IE
14
-
0.3 +
j0.04
-
-
0.35 +
j0.04
-
mS
Output Admittance
Y
OE
15
-
0.001
+ j0.03
-
-
0.001
+ j0.03
-
mS
Reverse Transfer
Admittance
Y
RE
16
See
Curve
See
Curve
mS
Gain-Bandwidth Product
f
T
17
300
500
-
300
500
-
MHz
Emitter-to-Base Capacitance
C
EB
C
CB
C
Cl
18
-
0.70
-
-
0.70
-
pF
Collector-to-Base Capacitance
18
-
0.37
-
-
0.37
-
pF
Collector-to-Substrate
Capacitance
18
-
2.2
-
-
2.2
-
pF
Electrical Specifications
CA3183 Series
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3183
CA3183A
UNITS
T
A
= 25
o
C
MIN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
-
40
-
-
50
-
-
V
Collector-to-Emitter
Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
-
30
-
-
40
-
-
V
Collector-to-Substrate
Breakdown Voltage
V
(BR)ClO
I
CI
= 100
μ
A, I
B
= 0,
I
E
= 0
I
E
= 500
μ
A, I
C
= 0
-
40
-
-
50
-
-
V
Emitter-to-Base
Breakdown Voltage
V
(BR)EBO
-
5
-
-
5
-
-
V
Collector-Cutoff Current
I
CEO
V
CE
= 10V, I
B
= 0
19
-
-
10
-
-
10
μ
A
Electrical Specifications
CA3146 Series
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3146
CA3146A
UNITS
T
A
= 25
o
C
MN
TYP
MAX
MIN
TYP
MAX
V
-------------
CA3146, CA3146A, CA3183, CA3183A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CA3146A | High-Voltage Transistor Arrays |
| CA3146E | High-Voltage Transistor Arrays |
| CA3146M | High-Voltage Transistor Arrays |
| CA3183A | High-Voltage Transistor Arrays |
| CA3183AE | High-Voltage Transistor Arrays |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3146 WAF | 制造商:Intersil Corporation 功能描述: |
| CA3146_01 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High-Voltage Transistor Arrays |
| CA3146A | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High-Voltage Transistor Arrays |
| CA3146AE | 制造商:Rochester Electronics LLC 功能描述: |
| CA3146AM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High-Voltage Transistor Arrays |
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