參數(shù)資料
型號(hào)： CA3146A
廠商： Intersil Corporation
英文描述： High-Voltage Transistor Arrays
中文描述： 高壓晶體管陣列
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 121K
代理商： CA3146A
2
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (V
CEO
)
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-to-Base Voltage (V
CBO
)
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector-to-Substrate Voltage (V
CIO
, Note 1)
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter to Base Voltage (V
EBO
) all types. . . . . . . . . . . . . . . . . . . . . 5V
Collector Current
CA3146A, CA3146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Base Current (I
B
) - CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note 2)
14 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any One Transistor, Note 3)
CA3146A, CA3146. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
CA3183A, CA3183. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Package). . . . . . . . .150
o
C
Maximum Storage Temperature Range (all types) . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
100
200
95
175
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more
negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid
undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass
capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
CA3146 Series
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3146
CA3146A
UNITS
T
A
= 25
o
C
MN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
-
40
72
-
50
72
-
V
Collector-to-Emitter
Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
-
30
56
-
40
56
-
V
Collector-to-Substrate
Breakdown Voltage
V
(BR)CIO
I
CI
= 10
μ
A, I
B
= 0,
I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
B
= 0
-
40
72
-
50
72
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
CEO
-
5
7
-
5
7
-
V
Collector-Cutoff Current
1
-
See
Curve
5
-
See
Curve
5
μ
A
Collector-Cutoff Current
I
CBO
h
FE
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10
μ
A
V
CE
= 3V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
2
-
0.002
100
-
0.002
100
nA
DC Forward-Current Transfer
Ratio
3
-
85
-
-
85
-
-
3
30
100
-
30
100
-
-
3
-
90
-
-
90
-
-
Base-to-Emitter Voltage
V
BE
4
0.63
0.73
0.83
0.63
0.73
0.83
V
Collector-to-Emitter
Saturation Voltage
V
CE SAT
5
-
0.33
-
-
0.33
-
V
DC CHARACTERISTICS FOR TRANSISTORS Q
1
AND Q
2
(As A Differential Amplifier)
Magnitude of Input Offset
Voltage |V
BE1
- V
BE2
|
Magnitude of Base-to-Emitter
Temperature Coefficient
|V
IO
|
V
CE
= 5V, I
E
= 1mA
6, 7
-
0.48
5
-
0.48
5
mV
V
CE
= 5V, I
E
= 1mA
-
-
1.9
-
-
1.9
-
mV/
o
C
----------------
CA3146, CA3146A, CA3183, CA3183A
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