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參數(shù)資料
| 型號(hào)： | CAT24C44PI-TE13 |
| 英文描述： | 256-Bit Serial Nonvolatile CMOS Static RAM |
| 中文描述： | 256位串行非易失性的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 97K |
| 代理商： | CAT24C44PI-TE13 |
CAT24C44
3
Doc. No. 1083, Rev. R
2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................
–
55
°
C to +125
°
C
Storage Temperature.......................
–
65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(2)
.............
–
2.0 to +VCC +2.0V
V
CC
with Respect to Ground ...............
–
2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°
C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°
C
Output Short Circuit Current
(3)
........................ 100 mA
*COMMENT
Stresses above those listed under
“
Absolute Maximum
Ratings
”
may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Note:
(1) These parameter are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(2) The minimum DC input voltage is
–
0.5V. During transitions, inputs may undershoot to
–
2.0V for periods of less than 20 ns.
Maximum DC voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from
–
1V to V
CC
+1V.
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 5V
Symbol
Parameter
Max.
Unit
Conditions
C
I/O(1)
Input/Output Capacitance
10
pF
V
I/O
= 0V
C
IN(1)
Input Capacitance
6
pF
V
IN
= 0V
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V
±
10%, unless otherwise specified.
Limits
Typ.
Symbol
Parameter
Min.
Max.
Unit
Conditions
Inputs = 5.5V, T
A
= 0
°
C
All Outputs Unloaded
I
CCO
Current Consumption (Operating)
3
mA
I
SB
Current Consumption (Standby)
30
μ
A
μ
A
μ
A
CE = V
IL
I
LI
Input Current
2
0
≤
V
IN
≤
5.5V
0
≤
V
OUT
≤
5.5V
I
LO
Output Leakage Current
10
V
IH
High Level Input Voltage
2
V
CC
V
V
IL
Low Level Input Voltage
0
0.8
V
V
OH
High Level Output Voltage
2.4
V
I
OH
=
–
2mA
V
OL
Low Level Output Voltage
0.4
V
I
OL
= 4.2mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
T
DR(1)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Min.
Typ.
Max.
Units
Endurance
100,000
Cycles/Byte
Data Retention
10
Years
ESD Susceptibility
2000
Volts
Latch-up
100
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT24C44S | 功能描述:NVRAM (128x8) 1k 1.8-6.0 RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT24C44SI-TE13 | 制造商:ON Semiconductor 功能描述:NVRAM NVSRAM Serial 256-Bit 5V 8-Pin SOIC N T/R |
| CAT24C44S-TE13 | 制造商:ON Semiconductor 功能描述:NVRAM NVSRAM Serial 256-Bit 5V 8-Pin SOIC N T/R |
| CAT24C44VI | 功能描述:NVRAM 256-Bit Serial N.V. RAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CAT24C44VI-G | 功能描述:NVRAM 256-Bit Serial N.V. RAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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