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參數(shù)資料
| 型號(hào)： | CAT24C44VI-TE13 |
| 英文描述： | 256-Bit Serial Nonvolatile CMOS Static RAM |
| 中文描述： | 256位串行非易失性的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | CAT24C44VI-TE13 |
CAT24C44
7
Doc. No. 1083, Rev. R
2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
RCL/
RECALL
Data is transferred from the EEPROM data memory to
RAM by either sending the RCL instruction or by pulling
the
RECALL
input pin low. A recall operation must be
performed before the EEPROM store, or RAM write
operations can be executed. Either a hardware or soft-
ware recall operation will set the
“
previous recall
”
latch
internal to the CAT24C44.
POWER-ON RECALL
The CAT24C44 has a power-on recall function that
transfers the EEPROM data to the RAM. After Power-
up, all functions are inhibited for at least 200ns (T
pur
)
from stable V
cc
.
STO/
STORE
Data in the RAM memory area is stored in the EEPROM
memory either by sending the STO instruction or by
pulling the
STORE
input pin low. As security against any
inadvertent store operations, the following conditions
must each be met before data can be transferred into
nonvolatile storage:
The
“
previous recall
”
latch must be set (either a
software or hardware recall operation).
The
“
write enable
”
latch must be set (WREN
instruction issued).
STO instruction issued or
STORE
input low.
During the store operation, all other CAT24C44 func-
tions are inhibited. Upon completion of the store opera-
tion, the
“
write enable
”
latch is reset. The device also
provides false store protection whenever V
CC
falls below
a 3.5V level. If V
CC
falls below this level, the store
operation is disabled and the
“
write enable
”
latch is
reset.
Figure 6. Hardware Store Cycle Timing
Figure 5. Recall Cycle Timing
RECALL
tRCZ
tORC
tRCC
tRCP
tARC
VALID DATA
UNDEFINED DATA
DO
HIGH-Z
STORE
tST
tSTP
DO
tSTZ
HIGH-Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT24C44V-TE13 | 制造商:ON Semiconductor 功能描述:256-BIT SERIAL N.V. RAM - Tape and Reel |
| CAT24C512HU5IGT3 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 512KB I2C SER 電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT24C512LI-G | 功能描述:電可擦除可編程只讀存儲(chǔ)器 512KB I2C SER 電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT24C512WI-G | 制造商:ON Semiconductor 功能描述:512KB I2C SER EEPROM - Rail/Tube 制造商:ON Semiconductor 功能描述:EEPROM 512KB I2C SER EEPROM 制造商:ON Semiconductor 功能描述:TUBE / 512KB I2C SER EEPROM |
| CAT24C512WI-GT3 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 512KB I2C SER 電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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