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參數(shù)資料
| 型號(hào)： | CAT28C64BT13I-15 |
| 英文描述： | 64K-Bit CMOS PARALLEL E2PROM |
| 中文描述： | 64K的位CMOS并行E2PROM的 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | CAT28C64BT13I-15 |
CAT28C64B
3
Doc. No. 25006-0A 2/98 P-1
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°
C to +125
°
C
Storage Temperature....................... –65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°
C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°
C
Output Short Circuit Current
(3)
........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
Parameter
Min.
10
5
Max.
Units
Test Method
Endurance
Cycles/Byte
MIL-STD-883, Test Method 1033
T
DR(1)
Data Retention
100
Years
MIL-STD-883, Test Method 1008
V
ZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
I
LTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
D
OUT
ACTIVE
Byte Write (WE Controlled)
L
H
D
IN
ACTIVE
Byte Write (CE Controlled)
L
H
D
IN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(1)
Input/Output Capacitance
Test
Max.
Units
Conditions
10
pF
V
I/O
= 0V
C
IN(1)
Input Capacitance
6
pF
V
IN
= 0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28C64BT13I-15T | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28C64BT13I-90 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BW12 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BW-12 | 制造商:ON Semiconductor 功能描述:IC EEPROM 64KBIT PARALLEL SOIC-28 |
| CAT28C64BW-12T | 功能描述:電可擦除可編程只讀存儲(chǔ)器 64K-Bit CMOS PARA 電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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