參數(shù)資料
型號(hào): CAT28F512TR-15
廠商: ON SEMICONDUCTOR
元件分類: PROM
英文描述: 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 8 X 20 MM, REVERSE, TSOP-32
文件頁數(shù): 11/15頁
文件大小: 427K
代理商: CAT28F512TR-15
CAT28F512
5
Doc. No. 1084, Rev. H
SUPPLY CHARACTERISTICS
Limits
Symbol
Parameter
Min
Max.
Unit
VCC
VCC Supply Voltage
4.5
5.5
V
VPPL
VPP During Read Operations
0
6.5
V
VPPH
VPP During Read/Erase/Program
11.4
12.6
V
Note:
(1)
This parameter is tested initially and after a design or process change that affects the parameter.
(2)
Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3)
Input Rise and Fall Times (10% to 90%) < 10 ns.
(4)
Input Pulse Levels = 0.45V and 2.4V.
(5)
Input and Output Timing Reference = 0.8V and 2.0V.
(6)
Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
A.C. CHARACTERISTICS, Read Operation
VCC = +5V ±10%, unless otherwise specified.
JEDEC
Standard
28F512-90
28F512-12 28F512-15
Symbol
Parameter
Min. Max.
Min. Max. Min. Max. Unit
tAVAV
tRC
Read Cycle Time
90
120
150
ns
tELQV
tCE
CE Access Time
90
120
150
ns
tAVQV
tACC
Address Access Time
90
120
150
ns
tGLQV
tOE
OE Access Time
35
50
55
ns
tAXQX
tOH
Output Hold from Address
OE/CE Change
0
ns
tGLQX
tOLZ(1)(6) OE to Output in Low-Z
0
ns
tELQX
tLZ(1)(6)
CE to Output in Low-Z
0
ns
tGHQZ
tDF(1)(2)
OE High to Output High-Z
20
30
35
ns
tEHQZ
tDF(1)(2)
CE High to Output High-Z
30
40
45
ns
tWHGL(1)
-
Write Recovery Time Before Read
6
s
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)
Figure 2. A.C. Testing Load Circuit (example)
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