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參數(shù)資料
| 型號： | CAT28F512TRA-90 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封裝： | 8 X 20 MM, REVERSE, TSOP-32 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 427K |
| 代理商： | CAT28F512TRA-90 |
CAT28F512
6
Doc. No. 1084, Rev. H
A.C. CHARACTERISTICS, Program/Erase Operation
VCC = +5V ±10%, unless otherwise specified.
JEDEC
Standard
28F512-90
28F512-12
28F512-15
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
tAVAV
tWC
Write Cycle Time
90
120
150
ns
tAVWL
tAS
Address Setup Time
0
ns
tWLAX
tAH
Address Hold Time
40
ns
tDVWH
tDS
Data Setup Time
40
ns
tWHDX
tDH
Data Hold Time
10
ns
tELWL
tCS
CE Setup Time
0
ns
tWHEH
tCH
CE Hold Time
0
ns
tWLWH
tWP
WE Pulse Width
40
ns
tWHWL
tWPH
WE High Pulse Width
20
ns
tWHWH1(2)
-
Program Pulse Width
10
s
tWHWH2(2)
-
Erase Pulse Width
9.5
ms
tWHGL
-
Write Recovery Time Before Read
6
s
tGHWL
-
Read Recovery Time Before Write
0
s
tVPEL
-VPP Setup Time to CE
100
ns
ERASE AND PROGRAMMING PERFORMANCE(1)
28F512-90
28F512-12
28F512-15
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Chip Erase Time(3)(5)
0.5
10
0.5
10
0.5
10
sec
Chip Program Time(3)(4)
1
6
16
sec
Note:
(1)
Please refer to Supply characteristics for the value of VPPH and VPPL. The VPP supply can be either hardwired or switched. If VPP is switched,
VPPL can be ground, less than VCC + 2.0V or a no connect with a resistor tied to ground.
(2)
Program and Erase operations are controlled by internal stop timers.
(3)
‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25
°C, 12.0V VPP.
(4)
Minimum byte programming time (excluding system overhead) is 16
s (10 s program + 6 s write recovery), while maximum is 400 s/
byte (16
s x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
(5)
Excludes 00H Programming prior to Erasure.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512TRI-12 | 功能描述:閃存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512TRI-90 | 功能描述:閃存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28FD10N-12 | 制造商:Catalyst Semiconductor 功能描述: |
| CAT28FO10N-12 | 制造商:Catalyst Semiconductor 功能描述: |
| CAT28LV256G25 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K 3V 250 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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