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參數(shù)資料
| 型號： | CAT28LV256 |
| 英文描述： | 256K-Bit CMOS Parallel EEPROM(低壓,快速，低功耗，256K位（32K x 8位）并行CMOS EEPROM) |
| 中文描述： | 256K位CMOS并行的EEPROM（低壓，快速，低功耗，256K位（32K的× 8位）并行的CMOS EEPROM的） |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 71K |
| 代理商： | CAT28LV256 |
CAT28LV256
7
Preliminary
Doc. No. 25040-00 2/98
OE
CE
WE
ADDRESS
I/O
tWP
tBLC
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
LAST BYTE
tWC
ADDRESS
CE
OE
WE
DATA OUT
tAS
DATA IN
DATA VALID
HIGH-Z
tAH
tWC
tOEH
tDH
tDS
tOES
tBLC
tCH
tCS
tCW
Page Write
The page write mode of the CAT28LV256 (essentially
an extended BYTE WRITE mode) allows from 1 to 64
bytes of data to be programmed within a single E
2
PROM
write cycle. This effectively reduces the byte-write time
by a factor of 64.
Following an initial WRITE operation (
WE
pulsed low, for
t
WP
, and then high) the page write mode can begin by
issuing sequential
WE
pulses, which load the address
and data bytes into a 64 byte temporary buffer. The page
address where data is to be written, specified by bits A
6
to A
14
, is latched on the last falling edge of
WE
. Each
byte within the page is defined by address bits A
0
to A
5
(which can be loaded in any order) during the first and
subsequent write cycles. Each successive byte load
cycle must begin within t
BLC MAX
of the rising edge of the
preceding
WE
pulse. There is no page write window
limitation as long as
WE
is pulsed low within t
BLC MAX
.
Upon completion of the page write sequence,
WE
must
stay high a minimum of t
BLC MAX
for the internal auto-
matic program cycle to commence. This programming
cycle consists of an erase cycle, which erases any data
that existed in each addressed cell, and a write cycle,
which writes new data back into the cell. A page write will
only write data to the locations that were addressed and
will not rewrite the entire page.
Figure 5. Byte Write Cycle [
CE
Controlled]
28LV256 F08
Figure 6. Page Mode Write Cycle
28LV256 F09
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28LV256G25 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K 3V 250 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28LV256G-25 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28LV256G-25T | 功能描述:電可擦除可編程只讀存儲器 256K-Bit Parallel 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28LV256G-30 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K 3V 300 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28LV256G-30T | 功能描述:電可擦除可編程只讀存儲器 256K-Bit Parallel 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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