參數(shù)資料
型號: CAT34RC02YITE13REV-E
元件分類: DRAM
英文描述: The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
中文描述: 該CAT24FC02是一個2 KB的EEPROM的國內(nèi)256個8位每字舉辦的串行CMOS
文件頁數(shù): 2/16頁
文件大?。?/td> 445K
代理商: CAT34RC02YITE13REV-E
CAT34RC02
2
Doc. No. 1052, Rev. K
CAPACITANCE
T
A
= 25
°
C, f = 400 kHz, V
CC
= 5 V
Symbol
C
I/O(2)
Input/Output Capacitance (SDA)
C
IN(2)
Input Capacitance (other pins)
Test
Conditions
Min
Typ
Max
Units
V
I/O
= 0 V
8
pF
V
IN
= 0 V
6
pF
k
k
Z
WPL
WP Input Impedance
V
IN
< 0.5 V
5
70
Z
WPH
WP Input Impedance
V
IN >
V
CC
x 0.7
500
RELIABILITY CHARACTERISTICS
Symbol
N
END(2)(*)
T
DR(2)(*)
V
ZAP(2)(*)
I
LTH(2)(3)
Parameter
Reference Test Method
Min
Units
Endurance
MIL-STD-883, Test Method 1033
1,000,000
Program/ Erase Cycles
Data Retention
MIL-STD-883, Test Method 1008
100
Years
ESD Susceptibility
MIL-STD-883, Test Method 3015
4000
Volts
Latch-up
JEDEC Standard 17
100
mA
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55
°
C to +125
°
C
Storage Temperature........................ -65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(1)
............ -2.0 V to V
CC
+ 2.0 V
Voltage on A
0..................................................
-2.0 V to +12.0 V
V
CC
with Respect to V
SS..............................
-2.0 V to +7.0 V
Note:
(1) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin
may undershoot to no less than -2.0 V or overshoot to no more than VCC + 2.0 V, for periods of less than 20 ns. The maximum DC
voltage on address pin A
0
is +12.0 V.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100 mA on I/O pins from -1.0 V to V
CC
+ 1.0 V.
(4) Standby Current, I
SB
= 10
μ
A max at extended temperature range.
*COMMENT
Stresses above those listed under
Absolute Maximum Ratings
may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside of those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended periods
may affect device performance and reliability.
(*) Page Mode, VCC = 5 V, 25
°
C
D.C. OPERATING CHARACTERISTICS
V
CC
= 1.7 V to 5.5 V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
CC
Power Supply Current (Read)
f
SCL
= 100 kHz
1
mA
I
CC
I
SB(4)
Power Supply Current (Write)
f
SCL
= 100 kHz
3
mA
μ
A
μ
A
μ
A
Standby Current (V
CC
= 5.0 V)
V
IN
= GND or V
CC
1
I
LI
Input Leakage Current
V
IN
= GND to V
CC
1
I
LO
Output Leakage Current
V
OUT
= GND to V
CC
1
V
IL
Input Low Voltage
1
V
CC
x 0.3
V
V
IH
Input High Voltage
V
CC
x 0.7
V
CC
+ 1.0
V
V
OL1
Output Low Voltage (V
CC
= 3.0 V)
I
OL
= 3 mA
0.4
V
V
OL2
Output Low Voltage (V
CC
= 1.7 V)
I
OL
= 1.5 mA
0.5
V
V
HV
RSWP Set/Clear Overdrive
A
0
High Voltage
V
HV
- V
CC
> 4.8 V
7
10
V
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CAT34RC02PITE13REV-E The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAT34RC02JITE13REV-E The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAT34RC02PETE13REV-E The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAT34RC02LETE13REV-E The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
CAT34RC02LITE13REV-E The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
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