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| 型號： | CAT34WC02YITE13E |
| 元件分類： | EEPROM |
| 英文描述： | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 中文描述： | 該CAT24FC02是一個2 KB的EEPROM的國內(nèi)256個8位每字舉辦的串行CMOS |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 284K |
| 代理商： | CAT34WC02YITE13E |
DsconinuedPat
C
IN(3)
Input Capacitance (A0, A1, A2, SCL)
V
IN
= 0 V
CAT34WC02
2
Doc. No. 1003, Rev. O
2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias
Storage Temperature....................... –65
°
C to +150
°
C
Voltage on Any Pin with
Respect to Ground
(1)
............–2.0 V to V
CC
+ 2.0 V
V
CC
with Respect to Ground ............. –2.0 V to +7.0 V
Package Power Dissipation
Lead Soldering Temperature (10 seconds)...... 300
°
C
Output Short Circuit Current
(2)
....................... 100 mA
–55
°
C to +125
°
C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
Note:
(1) The minimum DC input voltage is - 0.5 V. During transitions, inputs may undershoot to - 2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100 and
JEDEC test methods.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1 V to V
CC
+ 1 V.
(5) Maximum standby current (I
SB
) = 10
μ
A for the Automotive and Extended Automotive temperature range.
D.C. OPERATING CHARACTERISTICS
V
CC
= + 1.7 V to + 5.5 V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
CC
Power Supply Current (Read)
f
SCL
= 100 kHz
1
mA
I
CC
I
SB(5)
Power Supply Current (Write)
f
SCL
= 100 kHz
3
mA
Standby Current (V
CC
= 5.0 V)
V
IN
= GND or V
CC
1
μ
A
μ
A
μ
A
V
I
LI
Input Leakage Current
V
IN
= GND to V
CC
1
I
LO
Output Leakage Current
V
OUT
= GND to V
CC
1
V
IL
Input Low Voltage
–1
V
CC
x 0.3
V
IH
Input High Voltage
V
CC
x 0.7
V
CC
+ 1.0
V
V
OL1
Output Low Voltage (V
CC
= 3.0 V)
I
OL
= 3 mA
0.4
V
V
OL2
Output Low Voltage (V
CC
= 1.7 V)
I
OL
= 1.5 mA
0.5
V
CAPACITANCE
T
A
= 25
°
C, f = 1.0 MHz, V
CC
= 5.0 V
Symbol
Test
Conditions
Min
Typ
Max
Units
6
pF
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)(6)
I
LTH(3)(4)
Parameter
Min.
Max.
Units
Endurance
1,000,000
Cycles/Byte
Data Retention
100
Years
ESD Susceptibility
2000
Volts
Latch-up
100
mA
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