參數(shù)資料
型號(hào): CAT5111S-10SOIC
英文描述: EMITTER IR 950NM 5MM SMD RADIAL
中文描述: 100抽頭數(shù)字可編程的緩沖雨刮電位(民進(jìn)黨)
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 67K
代理商: CAT5111S-10SOIC
CAT5111
3
Doc. No. 2008, Rev. O
OPERATING MODES
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
V
CC
to GND
Inputs
CS
to GND
INC
to GND
U/
D
to GND
R
H
to GND
R
L
to GND
R
WB
to GND
0.5V to +7V
0.5V to V
CC
+0.5V
0.5V to V
CC
+0.5V
0.5V to V
CC
+0.5V
0.5V to V
CC
+0.5V
0.5V to V
CC
+0.5V
0.5V to V
CC
+0.5V
Operating Ambient Temperature
Commercial (
C
or Blank suffix)
Industrial (
I
suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10 sec max)
0
°
C to +70
°
C
40
°
C to +85
°
C
+150
°
C
65
°
C to +150
°
C
+300
°
C
* Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. Absolute Maximum Ratings
are limited values applied individually while other parameters are
within specified operating conditions, and functional operation at any
of these conditions is NOT implied. Device performance and reliability
may be impaired by exposure to absolute rating conditions for extended
periods of time.
NOTES:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from
1V to V
CC
+ 1V
(3) I
=source or sink
(4) These parameters are periodically sampled and are not 100% tested.
R
L
C
L
C
H
R
H
C
W
R
WB
R
wi
Potentiometer
Equivalent Circuit
Power Supply
Symbol
V
CC
I
CC1
Parameter
Operating Voltage Range
Supply Current (Increment)
Conditions
Min
2.5
Typ
Max
6.0
200
100
1
500
Units
V
μ
A
V
CC
= 6V, f = 1MHz, I
W
=0
V
CC
= 6V, f = 250kHz, I
W
=0
Programming, V
CC
= 6V
V
CC
= 3V
CS=V
CC
-0.3V
U/D, INC=V
CC
-0.3V or GND
I
CC2
Supply Current (Write)
mA
μ
A
μ
A
ISB
1 (2)
Supply Current (Standby)
75
150
DC Electrical Characteristics: V
CC
= +2.5V to +6.0V unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
IH
I
IL
V
IH1
V
IL1
V
IH2
V
IL2
Input Leakage Current
Input Leakage Current
TTL High Level Input Voltage
TTL Low Level Input Voltage
CMOS High Level Input Voltage
CMOS Low Level Input Voltage
V
IN
= V
CC
V
IN
= 0V
4.5V
V
CC
5.5V
2
0
10
10
V
CC
0.8
μ
A
μ
A
V
V
V
V
2.5V
V
CC
6V
V
CC
x 0.7
-0.3
V
CC
+ 0.3
V
CC
x 0.2
Logic Inputs
INCCC
High to Low
High to Low
High
Low
X
CSCC
Low
Low
Low to High
Low to High
High
U/DC
High
Low
X
X
X
Operation
Wiper toward RH
Wiper toward RL
Store Wiper Position
No Store, Return to Standby
Standby
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
V
ZAP(1)
I
LTH(1)(2)
T
DR
N
END
ESD Susceptibility
Latch-Up
Data Retention
Endurance
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
2000
100
100
Volts
mA
Years
Stores
1,000,000
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