Table 4. DC ELECTRICAL CHARACTERISTICS (VCC
參數資料
型號: CAT5116VI-GT3
廠商: ON Semiconductor
文件頁數: 6/11頁
文件大?。?/td> 0K
描述: IC POT DIG LOG 32K 100TAP 8SOIC
標準包裝: 3,000
系列: DPP
接片: 100
電阻(歐姆): 32k
電路數: 1
溫度系數: 標準值 300 ppm/°C
存儲器類型: 非易失
接口: 3 線串行(芯片選擇,遞增,增/減)
電源電壓: 2.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOIC
包裝: 帶卷 (TR)
CAT5116
http://onsemi.com
4
Table 4. DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V to +5.5 V unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
POWER SUPPLY
VCC
Operating Voltage Range
2.5
5.5
V
ICC1 (Note 5)
Supply Current (Increment)
VCC = 5.5 V, f = 1 MHz, IW = 0
100
mA
VCC = 5.5 V, f = 250 kHz, IW = 0
50
mA
ICC2
Supply Current (Write)
Programming, VCC = 5.5 V
1
mA
VCC = 3 V
500
mA
ISB1
Supply Current (Standby)
CS = VCC 0.3 V
U/D, INC = VCC 0.3 V or GND
0.01
1
mA
LOGIC INPUTS
IIH
Input Leakage Current
VIN = VCC
10
mA
IIL
Input Leakage Current
VIN = 0 V
10
mA
VIH1
TTL High Level Input Voltage
4.5 V VCC 5.5 V
2
VCC
V
VIL1
TTL Low Level Input Voltage
0
0.8
V
VIH2
CMOS High Level Input Voltage
2.5 V VCC 5.5 V
VCC x 0.7
VCC + 0.3
V
VIL2
CMOS Low Level Input Voltage
0.3
VCC x 0.2
V
POTENTIOMETER PARAMETERS
RPOT
Potentiometer Resistance
32
kW
RTOL
Pot. Resistance Tolerance
20
%
VRH
Voltage on RH pin
0
VCC
V
VRL
Voltage on RL pin
0
VCC
V
RV (Note 6)
Relative Variation
0.05
RWI
Wiper Resistance
VCC = 5 V, IW = 1 mA
200
400
W
VCC = 2.5 V, IW = 1 mA
400
1000
W
IW
Wiper Current
1
mA
TCRPOT
TC of Pot Resistance
300
ppm/C
TCRATIO
Ratiometric TC
20
ppm/C
VN
Noise
100 kHz / 1 kHz
8/24
nV/Hz
CH/CL/CW
Potentiometer Capacitances
8/8/25
pF
fc
Frequency Response
Passive Attenuator, 10 kW
1.7
MHz
3. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V.
4. This parameter is tested initially and after a design or process change that affects the parameter.
5. IW = source or sink.
6. Relative variation is a measure of the error in step size between taps = log (VW(N)) log(VW(N1)) = 0.045 0.003.
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