參數(shù)資料
型號(hào): CAT64LC20UATE13
英文描述: 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
中文描述: EEPROM的
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 140K
代理商: CAT64LC20UATE13
7
CAT64LC10/20/40
Doc. No. 1021, Rev. A
a 16-bit data field is also required following the 8-bit
address field.
The CAT64LC10/20/40 requires an active LOW
CS
in
order to be selected. Each instruction must be preceded
by a HIGH-to-LOW transition of
CS
before the input of
the 4-bit start sequence. Prior to the 4-bit start sequence
(1010), the device will ignore inputs of all other logical
sequence.
Figure 4. Write Instruction Timing
Figure 5. Ready/
BUSY
Status Instruction Timing
Read
Upon receiving a READ command and address (clocked
into the DI pin), the DO pin will output data one t
PD
after
the falling edge of the 16th clock (the last bit of the
address field). The READ operation is not affected by
the RESET input.
Write
After receiving a WRITE op code, address and data, the
device goes into the AUTO-Clear cycle and then the
* Please check instruction set table for address
SK
DI
CS
DO
RESET
1
0
1
0
0
1
0
0
ADDRESS*
D15
D0
RDY/
BUSY
SK
DI
CS
DO
RESET
WRITE INSTRUCTION
NEXT INSTRUCTION
HIGH
LOW
RDY/
BUSY
相關(guān)PDF資料
PDF描述
CAT64LC20UITE13 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CAT64LC20URATE13 EEPROM
CAT64LC20URITE13 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CAT64LC20URTE13 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
CAT64LC20UTE13 EEPROM
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