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參數(shù)資料
| 型號(hào)： | CC5401 |
| 英文描述： | TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 600MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 150伏五（巴西）總裁| 600毫安一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CC5401 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
CC5401
(9AW)
TO-92
BCE
MARKING : CC
5401
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
Derate Above 25 deg C
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
SYMBOL
VCEO
VCBO
VEBO
IC
PD
VALUE
150
160
5.0
600
625
5.0
1.5
12
150
-55 to +150
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C
PD
Tj
Tstg
Rth(j-c)
Rth(j-a)
83.3
200
deg C/W
deg C/W
SYMBOL
VCEO*
VCBO
VEBO
ICBO
TEST CONDITION
IC=1uA,IB=0
IC=100uA.IE=0
IE=10uA, IC=-0
VCB=160V, IE=0
MIN
150
160
5.0
-
TYP
-
-
-
-
MAX
-
-
-
50
UNIT
V
V
V
nA
Ta=100 deg C
VCB=160V, IE=0
VCE=150V, IB=0
VEB=4V, IC=0
IC=1mA,VCE=5V
IC=10mA,VCE=5V
IC=50mA,VCE=5V
-
-
50
1.0
50
-
320
-
uA
uA
nA
ICEO
IEBO
hFE*
Emitter-Cut off Current
DC Current Gain
-
-
-
-
-
50
80
50
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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