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參數(shù)資料
| 型號(hào)： | CD645B |
| 英文描述： | Standard Rectifier (trr more than 500ns) |
| 中文描述： | 標(biāo)準(zhǔn)整流器（花環(huán)率超過(guò)500ns的） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | CD645B |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
DESIGN DATA
METALLIZATION:
Top: (Anode) ....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Min
GOLD THICKNESS ........4,000 Min
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions ± 2 mils
GENERAL PURPOSE SILICON DIODES
ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
VRM
VRWM
I O
IFSM
TYPE
TA=+150°Ctp = 1/120 S
TA=25°C
V(pk)
mA
A
CD483B
80
70
200
50
2
CD485B
180
200
50
2
CD486B
250
225
200
50
2
CD645
270
225
400
150
5
CD5194
80
70
200
50
2
CD5195
180
200
50
2
CD5196
250
225
200
50
2
VF(1)
IR1 at VRWM
IR2 at VRM
IR3 at VRWM
CAP
TYPE
TA+25°CTA+25°CTA+150°C@VR
=4V
V dc
nA dc
A
Adc
pF
CD483B
0.8 - 1.0
25
100
5
–
CD485B
0.8 - 1.0
25
100
5
–
CD486B
0.8 - 1.0
25
100
5
–
CD645
0.8 - 1.0
50
25
2.0
CD5194
0.8 - 1.0
25
100
5
–
CD5195
0.8 - 1.0
25
100
5
–
CD5196
0.8 - 1.0
25
100
5
–
24 MILS
12 MILS
12
MILS
24
M
ILS
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