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參數(shù)資料
| 型號(hào)： | CD671415 |
| 英文描述： | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|150A I(T) |
| 中文描述： | 晶閘管模塊|倍增|半CNTLD |負(fù)| 1.4KV五（無線資源管理）| 150A我（翻譯） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | CD671415 |
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR/Diode Isolated Module
150 Amperes / Up to 1600 Volts
Revision Date: 12/04/2002
CD62__15A
CD67__15A
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
IDRM
Up to 1600V, TJ=125°C
50
mA
Repetitive Peak Reverse Leakage Current
IRRM
Up to 1600V, TJ=125°C
50
mA
Peak On-State Voltage
VTM / VFM
ITM / IFM =500A
1.54
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 125°C, I = 16.7% x πIT(AV) to πIT(AV)
0.80
1.67
V
m
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 125°C, I = πIT(AV) to ITSM
0.98
1.38
V
m
VTM Coefficients, Full Range
TJ = 125°C, I = 15% x IT(AV) to ITSM
VTM = A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.5926
-1.10E-03
1.03E-03
0.0241
Minimum dV/dt
dV/dt
Exponential to 2/3 VDRM
Tj=125°C, Gate Open
1000
V/s
Turn-On Time (Typical)
ton
ITM = 300A, VD = 2/3 VDRM dIg/dt =1A/s
3
(Typical)
s
Turn-Off Time (Typical)
t off
TJ = 125°C, IT= 300A, Rgk = 100
Vr = 50V, -dI/dt=15 A/s
Re-Applied dV/dt = 20V/s,
Linear to 2/3 VDRM
50 - 200
(Typical)
s
Gate Trigger Current
IGT
Tj= -40°C, VD=6V, Ra=1, Resistive Load
Tj= 25°C, VD=6V, Ra=1 Resistive Load
Tj=125°C, VD=6V, Ra=1, Resistive Load
270
150
80
mA
Gate Trigger Voltage
VGT
Tj= -40°C, VD=6V, Ra=1, Resistive Load
Tj= 25°C, VD=6V, Ra=1, Resistive Load
Tj=125°C, VD=6V, Ra=1, Resistive Load
4.0
2.5
1.7
Volts
Non-Triggering Gate Voltage
VGDM
Tj=125°C, VD=VDRM
0.30
Volts
Non-Triggering Gate Current
IGDM
Tj=125°C, VD=VDRM
10
mA
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
DC Operation
RΘJ-C
Per Module, both conducting
Per Junction, both conducting
0.08
0.16
°C/W
Thermal Impedance Coefficients
(Per Junction)
ZΘJ-C
ZΘJ-C= K1 (1-exp(-t/τ 1))
+ K2 (1-exp(-t/τ 2))
+ K3 (1-exp(-t/τ 3))
+ K4 (1-exp(-t/τ 4))
K1 =5.45334E-3
K2 =3.8509E+1
K3 = -3.5154E+1
K4 = -3.20
τ 1 =4.511E-5
τ 2 =1.3558E-1
τ 3 =1.3311E-1
τ 4 =1.5936E-1
Thermal Resistance, Case to Sink Lubricated
RΘC-S
Per Module
0.05
°C/W
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