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參數(shù)資料
| 型號(hào)： | CDD2061G |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 3A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | CDD2061G |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL POWER TRANSISTOR
CDD2061
(9AW)
TO-220
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter- Base Voltage
Collector Current
Peak
Power Dissipation @ Ta=25 deg C
Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
VALUE
80
60
5.0
3.0
6.0
2.0
30
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
Tj
Tstg
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
VCE(Sat)
VBE(Sat)
hFE
TEST CONDITION
IC=1mA, IB=0
IC=50uA, IE=0
IE=50uA,IC=0
VCB=60V, IE=0
VEB=4V,IC=0
IC=2A,IB=0.2A
IC=2A, IB=0.2A
IC=0.5A, VCE=5V
MIN
60
80
5.0
-
-
-
-
60
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
10
10
1.0
1.5
500
UNIT
V
V
V
uA
uA
V
V
ft
VCE=5V,IC=0.5A,
f=5MHz
VCB=10V, IE=0
f=1MHz
-
8.0
-
MHz
Collector Output Capacitance
Cob
-
70
-
pF
hFE CLASSIFICATION:-
MARKING :
D : 60 -120;
CDD
2061
D
E : 100 -200;
CDD
2061
E
F: 160-320;
CDD
2061
F
G : 250-500
CDD
2061
G
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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