參數(shù)資料
型號: CDLL5194
英文描述: General Purpose Silicon Diodes(通用型硅二極管)
中文描述: 通用硅二極管(通用型硅二極管)
文件頁數(shù): 1/2頁
文件大?。?/td> 33K
代理商: CDLL5194
FIGURE 1
DESIGN DATA
CASE:
DO-213AA
,
Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
100 C/W maximum
THERMAL IMPEDANCE: (
ZOJX): 70
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
MIN
MAX
1.60
1.70
0.41
0.55
3.30
3.70
2.54 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
0.063 0.067
0.016 0.022
.130
.100 REF.
.001 MIN.
MAX
.146
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/118
GENERAL PURPOSE SILICON DIODES
METALLURGICALLY BONDED
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25oC to 150oC
1.0mA/°C from 150oC to 175oC
Forward Current: 650mA
VRM
VRWM
I O
I O
I FSM
TP=1/120 S
TA=25oC
A
TYPE
TA= +150
°C
V(pk)
V(pk)
mA
mA
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
80
180
250
70
180
225
200
200
200
50
50
50
2
2
2
VF
IR1 at VRWM
IR2 at VRM
TA=25oC
IR3 at VRWM
TA= 150
°C
TYPE
@100mA
V dc
nA dc
μ
A
μ
A dc
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
100
100
100
5
5
5
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