參數(shù)資料
型號: CDNBS08-T36
廠商: BOURNS INC
元件分類: 參考電壓二極管
英文描述: CDNBS08-T03~T36C - TVS Diode Array Series
中文描述: 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, SOIC-8
文件頁數(shù): 1/4頁
文件大?。?/td> 338K
代理商: CDNBS08-T36
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDNBS08-T03~T36C – TVS Diode Array Series
Features
Lead free as standard
RoHS compliant*
Protects 4 lines
Unidirectional & bidirectional
configurations
ESD protection > 40 KV
Applications
Audio/video inputs
RS-232, RS-422 & RS-423 data lines
Portable electronics
Medical sensors
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 8 lead narrow body SOIC package size format. The
Transient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns
Chip
Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
Parameter
Symbol
Max.
Unit
Operating Temperature
T
J
-55 to +150
°C
Storage Temperature
T
STG
-55 to +150
°C
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C.
8
7
6
5
1
2
3
4
8
7
6
5
1
2
3
4
Parameter
Symbol
CDNBS08-
Uni-
Unit
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Breakdown Voltage @ 1 mA
V
BR
3.3
6.0
8.5
13.3
16.7
26.7
40.0
V
Working Peak Voltage
V
WM
3.0
5.0
8.0
12.0
15.0
24.0
36.0
V
Maximum Clamping Voltage
VC@ IP
Maximum Clamping Voltage
@ 8/20 μs VC@ IPP
Maximum Leakage Current
@ VWM
Maximum Cap Unidirectional
@ 0 V, 1 MHz
1
V
F
4.0
9.8
13.4
19.0
24.0
43.0
51.0
V
1
V
F
10.9 V
@ 43 A
13.5 V
@ 42 A
16.9 V
@ 34 A
25.9 V
@ 27 A
30.0 V
@ 17 A
49.0 V
@ 12 A
76.8 V
@ 9 A
V
I
D
125
20
10
1
1
1
1
μA
C
j(SD)
800
550
500
185
140
88
80
pF
Maximum Cap Bidirectional
@ 0 V, 1 MHz
C
j(SD)
450
308
300
105
80
50
45
pF
Peak Pulse Power (tp = 8/20 μs)
2
P
PP
500
W
Forward Voltage @ 100 mA,
300 μs – Square Wave
3
V
F
1.5
V
*RHSCOMPIAN
相關PDF資料
PDF描述
CDNBS08-T36C CDNBS08-T03~T36C - TVS Diode Array Series
CDNBS08-T03C CDNBS08-T03~T36C - TVS Diode Array Series
CDNBS08-T05 CDNBS08-T03~T36C - TVS Diode Array Series
CDNBS08-T05C CDNBS08-T03~T36C - TVS Diode Array Series
CDNBS08-T08 CDNBS08-T03~T36C - TVS Diode Array Series
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