參數(shù)資料
型號: CDSOT23-T15
廠商: BOURNS INC
元件分類: 參考電壓二極管
英文描述: CDSOT23-T03~T36C - TVS Diode Array Series
中文描述: 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 305K
代理商: CDSOT23-T15
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDSOT23-T03~T36C – TVS Diode Array Series
Features
Lead free as standard
RoHS compliant*
Protects 1 or 2 lines
Unidirectional & bidirectional
configurations
ESD protection > 40 KV
Applications
RS-232, RS-422 & RS-423 data lines
Portable electronics
Wireless bus protection
Control & monitoring systems
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in compact chip package SOT23 size format. The Transient
Voltage Supressor Array series offers a choice of voltage types ranging from 3 V to
36 V. Bourns
Chip Diodes conform to JEDEC standards, are easy to handle on
standard pick and place equipment and their flat configuration minimizes roll away.
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Parameter
Symbol
Value
Unit
Operating Temperature
T
J
-55 to +150
°C
Storage Temperature
T
STG
-55 to +150
°C
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDSOT23-T03C.
3
1
2
3
1
2
Parameter
Symbol
CDSOT23-
Uni-
Unit
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Breakdown Voltage @ 1 mA
V
BR
4.0
6.0
8.5
13.3
16.7
26.7
40.0
V
Working Peak Voltage
V
WM
3.3
5.0
8.0
12.0
15.0
24.0
36.0
V
Maximum Clamping Voltage
VC@ IP
Maximum Clamping Voltage
@ 8/20 μs VC@ IPP
Maximum Leakage Current
@ VWM
Maximum Cap Undirectional
@ 0 V, 1 MHz
1
V
F
7.0
9.8
13.4
19.0
24.0
43.0
51.0
V
1
V
F
10.9 V
@ 43 A
13.5 V
@ 42 A
16.9 V
@ 34 A
25.9 V
@ 27 A
30.0 V
@ 17 A
49.0 V
@ 12 A
76.8 V
@ 9 A
V
I
D
125
20
10
2
1
1
1
μA
C
j(SD)
500
350
250
150
100
88
80
pF
Maximum Cap Bidirectional
@ 0 V, 1 MHz
C
j(SD)
300
210
150
90
60
63
60
pF
Peak Pulse Power (tp = 8/20 μs)
2
P
PP
500
W
Forward Voltage @ 100 mA,
300 μs – Square Wave
3
V
F
1.5
V
*RHSCOMPIAN
相關(guān)PDF資料
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