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參數(shù)資料
| 型號： | CEM9935A |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 60K |
| 代理商： | CEM9935A |
CEM9939A
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250
μ
A
=
-30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
V
GS
=
=
-1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250
μ
A
=
-1
-1.4
-3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
-10V, I
D
-3.5A
60
100
m
m
V
GS
-4.5V, I
D
-2A
110
160
On-State Drain Current
I
D(ON)
g
V
DS
= -5V, V
GS
= -10V
-14
3
4.5
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
-15V,I
D
-3.5A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
810
P
F
350
P
F
P
F
130
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V,
I
D
= -1A,
V
GEN
= -10V,
R
GEN
= 6
20
28
ns
ns
ns
ns
7
14
37
50
23
32
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-10V, I
D
= -3.5A,
V
GS
=-10V
16
21
nC
nC
nC
2
4.5
C
Fall Time
=
=
=
=
=
=
5-159
5
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