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參數(shù)資料
| 型號： | CFD1275P |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR DALINGTON POWER TRANSISTORS |
| 中文描述： | NPN硅平面DALINGTON功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 111K |
| 代理商： | CFD1275P |
NPN SILICON PLANAR DALINGTON POWER TRANSISTORS
CFD1275, CFD1275A
TO-220FP Fully Isolated
Plastic Package
Complementary CFB949, CFB949A
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current Peak
Collector Current
Collector Power Dissipation @T
c
=25
o
C
@T
a
=25
o
C
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
CP
I
C
P
C
T
j
T
stg
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300
m
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=60V, I
E
=0,
CFD1275
V
CB
=80V, I
E
=0,
CFD1275A
V
CE
=30V, I
B
=0,
CFD1275
V
CE
=40V, I
B
=0,
CFD1275A
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
CFD1275
CFD1275A
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=8mA
V
CE
=4V, I
C
=2A
MIN
TYP
MAX
1.0
1.0
2.0
2.0
2.0
UNIT
mA
mA
mA
mA
mA
Collector Cut Off Current
I
CEO
Emitter Cut Off Current
Collector Emitter Voltage
I
EBO
V
CEO
60
80
1000
1000
V
V
DC Current Gain
h
FE
*h
FE
V
CE(sat)
V
BE
t
on
t
stg
t
r
10000
2.5
2.8
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Turn On Time
Storage Time
Fall Time
V
V
μ
s
μ
s
μ
s
0.5
4.0
1.0
*h
FE
Classification
A
A
CFD1275 CFD1275A
60 80
60 80
5
3500
W
W
UNIT
V
V
V
V
RMS
V
RMS
1500
4
2
35
2
oC
oC
150
- 55 to +150
I
C
=2A, I
B1
= - I
B2
=8mA
R : 1000 - 2500 Q : 2000 - 5000 P : 4000 - 10000
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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