參數(shù)資料
型號: CFH120-06
廠商: INFINEON TECHNOLOGIES AG
英文描述: Preliminary Datasheet
中文描述: 初步數(shù)據(jù)表
文件頁數(shù): 1/20頁
文件大?。?/td> 242K
代理商: CFH120-06
GaAs HEMT
CFH120
________________________________________________________________________________________________________
Infineon Technologies AG
Rev. 3.0/January 11
th
, 2002
page 1/20
Wireless Solutions
WS TI DS 12
Preliminary Datasheet
Features
·
low noise pseudomorphic HEMT
with high associated gain
·
low cost plastic package
·
for low noise front end amplifiers
up to 20 GHz
·
For DBS down converters
·
Fully RF tested at 12 GHz
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
1 = source
2 = drain
3 = source
4 = gate
Type
Marking
Ordering Code (taped)
Package
CFH120-06
H5s
Q62705-K0671
MW-4
CFH120-08
H3s
Q62705-K0603
MW-4
CFH120-10
H4s
Q62705-K0604
MW-4
Maximum Ratings
Characteristics
Symbol
Max. Value
Unit
Drain-source voltage
V
DS
3.0
V
Drain-gate voltage
V
DG
4.0
V
Gate-source voltage
V
GS
-2.0
V
Drain current
I
D
40
mA
Channel temperature
T
Ch
150
°C
Operating temperature
Top
-30 ... +85
°C
Storage temperature range
T
stg
-65 ... +150
°C
Total power dissipation (T
S
< 51°C) 1)
P
tot
180
mW
Thermal resistance
Channel-soldering point source
R
thChS
690
K/W
1) T
S
: Temperature measured at soldering point
相關(guān)PDF資料
PDF描述
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CFH2162-P5 2.3 TO 2.5 GHZ +36 DBM POWER GAAS FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CFH120-08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Preliminary Datasheet
CFH120-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Preliminary Datasheet
CFH2162-P1 制造商:MIMIX 制造商全稱:MIMIX 功能描述:800-900 MHz +36 dBm Power GaAs FET
CFH2162-P1_06 制造商:MIMIX 制造商全稱:MIMIX 功能描述:800-900 MHz +36 dBm Power GaAs FET
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