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參數(shù)資料
| 型號： | CFK2162-P5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2.3 to 2.5 GHz +34 dBm Power GaAs FET |
| 中文描述： | 二月三日至二月五日吉赫34 dBm的功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | CFK2162-P5 |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFK2162-P5
Features
J
High Gain
J
+34 dBm Power Output
J
Proprietary Power FET Process
J
>45% Linear Power Added Efficiency
J
+29 dBm with 30 dBc Third Order Products
J
Surface Mount SO-8 Power Package
Applications
J
ISM Band Base Stations and Terminals
J
PCS/PCN Base Stations and Terminals
J
Wireless Local Loop
Description
The CFK2162-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+34 dBm. The device is easily matched and provides excellent
linearity at 2 Watts. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
2.3 to 2.5 GHz
+34 dBm PowerGaAs FET
Produc t S pec ific ations
J uly 1997
(1 of 4)
1
3
4
7
8
6
5
2
G
G
D
D
Back Plane
is Source
GND
GND
GND
GND
Package Diagram
Notes:
1. Sum to two tones with 1 MHz spacing = 29 dBm.
2. See thermal considerations information on page 4.
3.
Max (+Vd) and (-Vg) under linear operation. Max potential difference
across the device in RF compression (2Vd+ |-Vg|) not to exceed the mini-
mum breakdown voltage (Vbr) of +18V.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
IDS
PT
TCH
TSTG
Rating
12V(3)
-5V
Idss
10W
175°C
-65°C to +175°C
Parameters
Vd= 8V, Id= 800 mA(Quiescent)
P-1dB
SSG
3rd Order
Products
(1)
Efficiency
@ P1dB
Vd= 5V, Id= 350 mA(Quiescent)
P-1dB
SSG
Conditions
Min
Typ
Max
Units
33.0 34.0
—
dBm
11.0 12.0
—
dB
26
—
30
40
—
—
dBc
%
—
—
30.0
9.0
—
—
dBm
dB
Vd= 5V, Id= 1200 mA(Quiescent)
P-1dB
SSG
—
32.5
—
dBm
—
10.0
—
dB
Specifications
(TA = 25°C)
The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.5 GHz.
Parameters
gm
Idss
Vp
BVGD
(3)
Θ
JL
(2)
Conditions
Vds = 2.0V, Vgs = 0V
Vds = 2.0V, Vgs = 0V
Vds = 3.0V, Ids = 65 mA
Igd = 6.5 mA
@150°C TCH
Min
—
—
—
18
—
Typ
1700
2.8
-1.8
20
10
Max
—
—
Units
mS
A
Volts
Volts
°C/W
—
—
SO-8 Power Package Physical Dimensions
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