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參數(shù)資料
| 型號： | CFY25-17 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | MICRO-X-4 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 2088K |
| 代理商： | CFY25-17 |
CFY25
Semiconductor Group
1 of 8
Draft D, Sep. 0000
HiRel
X-Band
GaAs Low Noise / General Purpose MESFET
HiRel
Discrete and Microwave
Semiconductor
For professional pre- and driver-amplifiers
For frequencies from 500 MHz to 20 GHz
Hermetically sealed microwave package
Low noise figure, high gain, moderate power
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
1
2
3
4
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
Package
1
2
3
4
CFY25-P (ql)
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
-
see below
G
S
D
S
Micro-X
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62703F120
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62703F119
(see order instructions for ordering example)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY67 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-06 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-08 | HiRel K-Band GaAs Super Low Noise HEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CFY25-20 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-20 (S) | 功能描述:射頻GaAs晶體管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| CFY25-20P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 (P) | 功能描述:射頻GaAs晶體管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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