參數(shù)資料
型號: CFY30
廠商: SIEMENS A G
元件分類: 小信號晶體管
英文描述: GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
中文描述: C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
文件頁數(shù): 1/6頁
文件大?。?/td> 46K
代理商: CFY30
GaAs FET
CFY 30
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996
HL EH PD 21
D a t a s h e e t
*
Low noise ( F
= 1.4 dB @ 4 GHz )
*
High gain ( 11.5 dB typ. @ 4 GHz )
*
For oscillators up to 12 GHz
*
For amplifiers up to 6 GHz
*
Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1 2 3 4
Package 1)
CFY 30
A2
Q62703-F97
S
D
S
G
SOT-143
Maximum ratings
Symbol
Value
Unit
Drain-source voltage
VDS
VDG
VGS
ID
TCh
Tstg
Pot
5
V
Drain-gate voltage
7
V
Gate-source voltage
-4 ... +0.5
V
Drain current
80
mA
Channel temperature
150
°C
Storage temperature range
-40...+150
°C
Total power dissipation
(TS < 70°C)
2)
250
mW
Thermal resistance
Channel-soldering point
2)
RhChS
<320
K/W
1)
Dimensions see chapter Package Outlines
2) T
S
is measured on the source 1 lead at the soldering point to the PCB.
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