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參數(shù)資料
| 型號： | CFY66-08 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel K-Band GaAs Super Low Noise HEMT |
| 中文描述： | 伊雷爾K波段低噪聲砷化鎵超遷移率晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 551K |
| 代理商： | CFY66-08 |
CFY66
S emiconductor Group
2 of 8
Draft D, S eptember 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
3.5
V
Drain-gate voltage
V
DG
4.5
V
Gate-source voltage (reverse / forward)
V
GS
- 3... + 0.5
V
Drain current
I
D
60
mA
Gate forward current
I
G
2
mA
RF Input Power, C- and X-Band
1)
P
RF,in
+ 10
dBm
J unction temperature
T
J
150
°
C
Storage temperature range
T
stg
- 65... + 150
°
C
Total power dissipation
2)
P
tot
200
mW
Soldering temperature
3)
T
sol
230
°C
Thermal Resistance
J unction-soldering point
R
th J S
≤
515 (tbc.)
K/W
Notes.:
1) For V
DS
≤
2 V. For V
DS
> 2 V, derating is required.
2) At T
S
= + 47 °C. For T
S
> + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CFY66-08P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
| CFY66-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
| CFY66-10P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67_11 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
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