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參數(shù)資料
| 型號： | CGD1044HI |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率放大器 |
| 英文描述： | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| 封裝： | CGD1044HI<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | CGD1044HI |
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant with Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2]
Direct Current (DC).
CGD1044HI
1 GHz, 25 dB gain GaAs high output power doubler
Rev. 2 — 29 September 2010
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 C; unless otherwise
specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
f = 50 MHz
-
23.2 -
dB
f = 1003 MHz
23.5 24.4 25.5 dB
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
[1] -
75 69 dBc
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
[1] 57
63
-
dBc
Itot
total current
[2] -
440
460
mA
相關(guān)PDF資料 |
PDF描述 |
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| CGD985HCI | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| CGD985HCI | 1 GHz, 25 dB gain GaAs high output power doubler |
| CGD987HCI | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| CGY1032 | 1 GHz, 32 dB gain GaAs push-pull amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CGD1044HI,112 | 功能描述:射頻放大器 1GHz,25 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| CGD1044HI/01A,112 | 制造商:NXP Semiconductors 功能描述:PHACGD1044HI/01A,112 1 GHZ, 25 DB GAIN G |
| CGD1044HI/01B,112 | 制造商:NXP Semiconductors 功能描述:PHACGD1044HI/01B,112 HYBRID AMPLIFIER MO |
| CGD1044HI112 | 制造商:NXP Semiconductors 功能描述: |
| CGD1046HI,112 | 功能描述:射頻放大器 1CH 4.5dB 24V 450mA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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