詳細信息
供應(yīng)UTC 仕蘭微 品牌充電器，電源專用mos管。
封裝：TO-251(DIP) ; TO-252(SMD
1、TO-251小插件封裝。80PCS/管。1N60 2N60 3N60 4N60
2.TO-252貼片1N60 2N60 3N60 4N60
1 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
2、韓產(chǎn)高品質(zhì)MOS管。
3、現(xiàn)貨特價供應(yīng)。珠三角支持快遞代收，全國支持支付寶。
1、TO-251小插件封裝。80PCS/管。
1 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
2、韓產(chǎn)高品質(zhì)MOS管芯片。
3、現(xiàn)貨特價供應(yīng)。珠三角支持快遞代收，全國支持支付寶。