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參數(shù)資料
| 型號(hào)： | CIL188 |
| 廠商： | Continental Device India Limited |
| 英文描述： | Intended For Low Voltage, High Current Output Pair Application |
| 中文描述： | 用于低電壓，高電流輸出對(duì)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | CIL188 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CIL 187
TO-92
Plastic Package
Intended For Low Voltage , High Current Output Pair Application
Complementary CIL 188
ABSOLUTE MAXIMUM RATINGS ( Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage (V
BE
=0)
Collector Emitter Voltage ( Open Base)
Emitter Base Voltage ( Open Collector)
Collector Current
CollectorCurent ( Peak Value )
Base Current
Base Current (Peak Value)
Total Power Dissipation @ Ta=25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TA
T
j
, T
stg
VALUE
25
15
5
700
1
100
200
625
-55 to +150
UNIT
V
V
V
mA
A
mA
mA
mW
oC
ELECTRICAL CHARACTERISTICS ( Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
UNIT
MIN
TYP
MAX
10
Collector Cut off Current
I
CBO
V
CB
=25V, I
E
= 0
μ
A
V
CB
=25V, I
E
= 0
T
j
= 150oC
V
EB
=5V, I
C
= 0
I
C
=1A, V
CE
=1V
I
C
=1A,I
B
=100mA
1
mA
Emitter Cut off Current
Base Cut on Voltage
Collector Emitter Saturation
Voltage
DC Current Gain
I
EBO
V
BE (on)
V
CE(sat)
10
1
0.5
μ
A
V
V
h
FE
V
CE
=10V,I
C
=5mA
V
CE
=1V,I
C
=300mA
V
CE
=1V,I
C
=1A
50
100
40
300
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Capacitance
f
T
C
c
I
C
=10mA, V
CE
=2V
270
MHz
CIL187
CIL188
I
E
=0, V
CB
=5V,
f=1MHz
10
30
pF
pF
VALUE
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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