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參數(shù)資料
| 型號(hào)： | CLY2 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
| 中文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | CLY2 |
GaAs FET
CLY 2
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/77
17.12.96
HL EH PD 21
D a t a s h e e t
*
Power amplifier for mobile phones
*
For frequencies up to 3 GHz
*
Operating voltage range: 2 to 6 V
* P
at V
=3V, f=1.8GHz typ. 23.5 dBm
*
High efficiency better 55 %
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
6
5
4
3
2
1
Type
Marking
Ordering code
(taped)
Pin Configuration
.
1 2 3 4 5 6
Package 1)
CLY 2
Y2
Q62702-L96
G
S
D
D
S
G
MW 6
Maximum ratings
Symbol
Unit
Drain-source voltage
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
9
V
Drain-gate voltage
12
V
Gate-source voltage
-6
V
Drain current
600
mA
Channel temperature
150
°C
Storage temperature
Total power dissipation
(TS < 50°C)
2)
-55...+150
°C
900
mW
Thermal Resistance
Channel-soldering point
2)
RthChS
≤
110
K/W
1)
Dimensions see chapter Package Outlines
2) TS is measured on the source lead at the soldering point to the pcb.
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