Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)<" />
參數(shù)資料
型號(hào)： CM2021-02TR
廠商： ON Semiconductor
文件頁數(shù)： 5/9頁
文件大?。?/td> 0K
描述： IC HDMI TX PORT P/I3 8TSSOP
產(chǎn)品變化通告： CMD Product Obsolescence 16/Mar/2011
標(biāo)準(zhǔn)包裝： 2,500
系列： *
CM202102TR
http://onsemi.com
5
SPECIFICATIONS (Cont’d)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ICC5V
Operating Supply Current
5V_SUPPLY = 5.0 V
110
130
mA
ICCLV
Bias Supply Current
LV_SUPPLY = 3.3 V
1
5
mA
IOFF
OFF State Leakage Current, Level Shifting
NFET
LV_SUPPLY = 0 V
0.1
5.0
mA
IBACKDRIVE
Current Conducted from Output Pins to
V_SUPPLY Rails when Powered Down
5V_SUPPLY < VCH_OUT
Signal Pins: TMDS_D[2:0]+/,
TMDS_CK+/, CE_REMOTE_OUT,
DDC_DAT_OUT, DDC_CLK_OUT,
HOTPLUG_DET_OUT Only
0.1
5.0
mA
IBACKDRIVE,
CEC
Current through CEREMOTE_OUT when
Powered Down
CEREMOTE_IN = CE_SUPPLY <
CE_REMOTE_OUT
0.1
1.0
mA
VON
VOLTAGE Drop Across Level Shifting NFET
when ON
LV_SUPPLY = 2.5 V, VS = GND,
IDS = 3 mA
75
95
140
mV
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8 mA, TA = 25C
(Note 2)
0.60
0.85
0.95
V
VESD
ESD Withstand Voltage (IEC)
Pins 4, 7, 10, 13, 20, 21, 22, 23, 24,
27, 30, 33 (Notes 2 and 3)
8
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25C, IPP = 1 A, tP = 8/20 ms
(Notes 2 and 4)
11.0
2.0
V
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA = 25C, IPP = 1 A, tP = 8/20 ms
(Notes 2 and 4)
1.2
0.9
W
ILEAK
TMDS Channel Leakage Current
TA = 25C (Note 2)
0.01
1
mA
CIN, TMDS
TMDS Channel Input Capacitance
5V_SUPPLY = 5.0 V, Measured at
1 MHz, VBIAS = 2.5 V (Note 2)
0.9
1.2
pF
DCIN, TMDS
TMDS Channel Input Capacitance Matching
5V_SUPPLY = 5.0 V, Measured at
1 MHz, VBIAS = 2.5 V (Note 2 and 5)
0.05
pF
CIN, DDC
Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, VBIAS = 2.5 V (Note 2)
3.5
4
pF
CIN, CEC
Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, VBIAS = 2.5 V (Note 2)
3.5
4
pF
CIN, HP
Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, VBIAS = 2.5 V (Note 2)
3.5
4
pF
1. Operating Characteristics are over Standard Operating Conditions unless otherwise specified.
2. This parameter is guaranteed by design and verified by device characterization.
3. Standard IEC 6100042, CDISCHARGE = 150 pF, RDISCHARGE = 330 W, 5V_SUPPLY and LV_SUPPLY within recommended operating
conditions, GND = 0 V, each bypassed with a 0.1 mF ceramic capacitor connected to GND.
4. These measurements performed with no external capacitor on ESD_BYP.
5. Intrapair matching, each TMDS pair (i.e. D+, D).
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