參數(shù)資料
型號(hào)： CMBD4150
廠(chǎng)商： Continental Device India Limited
英文描述： SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
中文描述： 硅平面高速二極管外延
文件頁(yè)數(shù)： 2/3頁(yè)
文件大小： 161K
代理商： CMBD4150
Continental Device India Limited
Data Sheet
Page 2 of 3
CMBD4150
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500
K/ W
CHARACTERISTICS (at T
A
= 25 °C, unless otherwise specified)
Continuous reverse voltage
Repetitive peak reverse voltage
Forward current (d.c.)
Repetitive peak forward current
Non–repetitive peak forward current
T = 1
μ
sec
T = 1 sec
Diode capacitance
V
R
= 0; f = 1 MHz
Forward voltage
V
R
V
RRM
I
F
I
FRM
max.
max.
max.
max.
50
75
300
600
V
V
mA
mA
I
FSM
I
FSM
max.
max.
4
A
A
0.5
C
D
max.
2.5
pF
min.
max.
540
620
mV
mV
I
F
= 1 mA
V
F
min.
max.
660
740
mV
mV
I
F
= 10 mA
V
F
min.
max.
760
860
mV
mV
I
F
= 50 mA
V
F
min.
max.
820
920
mV
mV
I
F
= 100 mA
V
F
min.
max.
870
mV
V
I
F
= 200 mA
V
F
1
Reverse breakdown voltage
I
R
= 100
m
A
Reverse voltage leakage current
V
R
= 50 V
Reverse current
V
R
= 50 V; T
j
= 150 °C
Forward recovery voltage
when switched to I
F
= 10 mA; t
P
= 20 nsec.
Reverse recovery time
I
F
= I
R
= 10 – 200 mAdc, R
L
= 100
I
F
= I
R
= 200 – 400 mAdc, R
L
= 100
V
BR
min
75
V
I
R
max.
100
nA
I
R
max.
100
μ
A
V
FR
max.
1.75
V
t
rr
t
rr
max.
max.
4 ns
6 ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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