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參數(shù)資料
| 型號： | CMBT2907 |
| 英文描述： | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|進步黨| 40V的五（巴西）總裁| 600毫安一（c）|至236AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | CMBT2907 |
Continental Device India Limited
Data Sheet
Page 2 of 4
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Power dissipation up to T
amb
= 25 °C
Storage temperature range
Junction temperature
CMBT2907
max.
max.
max.
max.
max.
CMBT2907A
60
60
5,0
600
250
–55 to +150
150
–V
CB0
–V
CE0
–V
EB0
–I
C
P
tot
T
stg
T
j
60
40
V
V
V
mA
mW
° C
° C
max.
THERMAL RESISTANCE
From junction to ambient in free air
R
th j–a
=
500
K/W
CHARACTERISTICS
T
j
=
25 °C unless otherwise specified
Collector cut–off current
I
E
= 0; –V
CB
= 50V
I
E
= 0; –V
CB
= 50V; T
j
= 125° C
–V
EB
= 0,5 V; –V
CE
= 30 V
Base current
with reverse biased emitter junction
–V
EB
= 3V; –V
CE
= 30V
Saturation voltages
–I
C
= 150 mA; –l
B
= 15 mA
CMBT2907
<
20
<
20
<
CMBT2907A
10
10
50
–I
CB0
–I
CB0
–I
CEX
nA
m
A
nA
–I
BEX
<
50
nA
–V
CEsat
–V
BEsat
<
<
0,4
1,3
V
V
–I
C
= 500 mA; –l
B
= 50 mA
–V
CEsat
–V
BEsat
<
<
1,6
2,6
V
V
Collector–base breakdown voltage
Open emitter; –I
C
= 10
m
A; I
E
= 0
Collector–emitter breakdown voltage
Open base; –I
C
= 10 mA; l
B:
0
Emitter–base breakdown voltage
Open collector; –I
E
= 10
m
A; I
C
= 0
–V
(BR)CBO
>
60
V
–V
(BR)CEO
>
40
60
V
–V
(BR)EBO
>
5,0
V
CMBT2907
CMBT2907A
D.C. current gain
–I
C
= 0,1 mA; –V
CE
= 10 V
–I
C
= 1 mA; –V
CE
= 10 V
–I
C
= 10 mA; –V
CE
= 10 V
–I
C
= 150mA; —V
CE
= 10V
–I
C
= 500mA; –V
CE
= 10V
h
FE
h
FE
h
FE
h
FE
h
FE
>
>
>
35
50
75
75
100
100
100 to 300
>
30
50
CMBT2907
CMBT2907A
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| CMBT2222A | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT2907A | 功能描述:兩極晶體管 - BJT PNP,0.6A,60V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT2907A-T | 功能描述:兩極晶體管 - BJT PNP 0.6A 60V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT2907AT/-W | 功能描述:兩極晶體管 - BJT PNP 0.6A 60V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT3903 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON EPITAXIAL TRANSISTORS |
| CMBT3904 | 功能描述:兩極晶體管 - BJT NPN,0.2A,40V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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