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參數(shù)資料
| 型號： | CMBT4124 |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 200mA的一（c）|至236AA |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CMBT4124 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Storage temperature
Junction temperature
T
stg
T
j
–55 to +150
max.
° C
° C
150
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
R
th j–a
556
°C/mW
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I
C
= 1 mA; I
B
= 0
Collector–base breakdown voltage
–I
C
= 10
m
A; I
E
= 0
Emitter–base breakdown voltage
–I
E
= 10
m
A; I
C
= 0
Collector cut–off current
–V
CB
= 20 V; I
E
= 0 V
Emitter cut–off current
V
BE
= 3 V; I
C
=0
Output capacitance at f = 100 kHz
I
E
= 0; –V
CB
= 5 V
Input capacitance at f = 100 kHz
I
C
= 0; –V
BE
= 0.5 V
–V
(BR)CEO
min.
30
V
–V
(BR)CBO
min.
40
V
–V
(BR)EBO
min.
5
V
–I
CBO
max.
50
nA
–I
EBO
max.
50
nA
C
c
max.
4
pF
C
e
max.
8
pF
Saturation voltages
–I
C
= 50 mA; –I
B
= 5 mA
–I
C
= 50 mA; –I
B
= 5 mA
D.C. current gain
–I
C
= 2 mA; –V
CE
= 1 V
–V
CEsat
–V
BEsat
max.
max.
0.3
0.95
V
V
h
FE
min.
max.
50
150
–I
C
= 50 mA; –V
CE
= 1 V
h
FE
min.
25
Noise figure at R
S
= 1 k
W
–I
C
= 100
m
A; –V
CE
= 5 V
f = 10 Hz to 15.7 kHz
NF
max.
6
dB
Transition frequency
–I
C
= 10 mA; –V
CE
= 20 V; f = 100 MHz
f
T
min.
250
MHz
Small signal current gain
–V
CE
= 1 V; –I
C
= 2 mA; f = 1 KHz
h
fe
min.
max.
50
200
CMBT4123
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PDF描述 |
|---|---|
| CMBT4125 | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-236AA |
| CMBT4126 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | TO-236AA |
| CMBT4401 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
| CMBT4403 | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
| CMBT847E | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT4125 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:GENERAL PURPOSE TRANSISTOR |
| CMBT4126 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:GENERAL PURPOSE TRANSISTOR |
| CMBT4401 | 功能描述:兩極晶體管 - BJT NPN,0.6A,40V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT4401-T | 功能描述:兩極晶體管 - BJT NPN 0.6A 40V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT4401T/-W | 功能描述:兩極晶體管 - BJT NPN 0.6A 40V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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