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參數(shù)資料
| 型號： | CMBT8099 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | CMBT8099 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CMBT847
SOT23
MARKING: AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta= 25 deg C unless otherwise specified)
DESCRIPTION
Collector -Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
50
50
6.0
200
150
V
V
V
mA
mW
deg C
-55 to +150
SYMBOL TEST CONDITION
VCEO
IC=100uA, IB=0
ICBO
VCB=50V, IE=0
IEBO
VEB=6V, IC=0
hFE(1)
IC=1mA,VCE=6V
hFE(2)
IC=0.1mA,VCE=6V
VCE(Sat) IC=100mA,IB=10mA
VBE(Sat) IC=100mA,IB=10mA
MIN
50
-
-
150
50
-
-
TYP
-
-
-
-
-
-
-
MAX
-
100
100
800
-
0.30
1.0
UNIT
V
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
V
V
ft
Cob
VCE=6V,IC=10mA,
VCB=6V, IE=0
f=1MHz
VCE=6V, IE=0.1mA
f=1kHz, Rg=2kohms
-
-
200
2.5
-
-
MHz
pF
Noise Figure
NF
-
-
15
dB
CLASSIFICATION
hFE(1)
MARKING
E
F
G
150-300
NE
250-500
NF
400-800
NG
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
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PDF描述 |
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| CMBT847G | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT8099-T | 功能描述:兩極晶體管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT8099T/-W | 功能描述:兩極晶體管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT847 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| CMBT847E | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| CMBT847F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
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