參數(shù)資料
型號(hào): CMY213
廠商: INFINEON TECHNOLOGIES AG
英文描述: GaAs MMIC
中文描述: 砷化鎵微波單片集成電路
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 149K
代理商: CMY213
GaAs Components
CMY 213
Data Sheet
3
2001-01-01
*
Important Note:
During production, the RF performance at PCS frequencies is screened. The passed
devices also achieve the specified RF performance at cellular frequencies.
Typical Performance at Cellular Frequencies
*
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 850 MHz;
f
LO
= 740 MHz;
P
LO
=
5 dBm;
f
IF
= 110 MHz;
Z
S
=
Z
L
= 50
; unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total operating Current
(Mixer + IF amplifier)
I
OP
8.0
9.5
mA
Conversion Gain
G
C
F
SSB
RFIrl/IFOrl
8.0
9.5
dB
SSB Noise Figure
8
dB
RF Input -/ IF Output return loss
(external matching required)
10
dB
3
rd
Order Input Intercept Point
IIP3
8
10
dBm
LO-RF Isolation
Iso
10
dB
Test Conditions at PCS Frequencies
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 1960 MHz;
f
LO
= 1750 MHz;
P
LO
=
5 dBm;
f
IF
= 210 MHz;
Z
S
=
Z
L
= 50
; unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total operating Current
(Mixer + IF amplifier)
I
OP
8.0
9.5
mA
Conversion Gain
G
C
F
SSB
RFIrl/IFOrl
7
8.5
dB
SSB Noise Figure
8.5
dB
RF Input -/ IF Output return loss
(external matching required)
10
dB
3
rd
Order Input Intercept Point
IIP3
10
12
dBm
LO-RF Isolation
Iso
6
dB
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