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參數(shù)資料
| 型號： | CN107 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | CN107 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CN 107
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Total Power Dissipation Ta=25deg C
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
60
50
6.0
100
200
300
-55 to +150
UNIT
V
V
V
mA
mA
mW
deg C
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Rth(j-c)
Rth(j-a)
83.3
200
deg C/W
deg C/W
SYMBOL
VCEO
VCBO
VEBO
ICBO
hFE
TEST CONDITION
IC=1mA,IB=0
IC=100uA,IE=0
IE=10uA.IC=0
VCB=30V, IE=0
IC=10uA,VCE=5V
IC=2mA,VCE=5V
IC=10mA,IB=1mA
IC=100mA,IB=5mA
IC=100mA,IB=5mA
IC=10mA,VCE=5V
MIN
50
60
6.0
-
-
125
-
-
-
-
TYP
MAX
UNIT
V
V
V
nA
-
15
-
500
-
0.60
-
0.77
90
-
0.10
-
0.90
-
Collector Emitter Saturation Voltage
VCE(Sat)
V
V
V
V
Base Emitter Saturation Voltage
Base Emitter on Voltage
VBE(Sat)
VBE(on)
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=10mA,
f=100MHz
VCB=10V, IE=0
f=1MHz
VEB=0.5V, IC=0
f=1MHz
-
350
-
MHz
Output Capacitance
Ccbo
-
-
4.5
pF
Input Capacitance
Cibo
-
10
-
pF
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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