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參數(shù)資料
| 型號： | CPH5803 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 39K |
| 代理商： | CPH5803 |
CPH5803
No.6935-2/5
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.5A
VDS=10V, VGS=10V, ID=1.5A
VDS=10V, VGS=10V, ID=1.5A
IS=1.5A, VGS=0
20
V
μ
A
μ
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1
±
10
1.3
0.4
1.9
2.8
160
200
280
100
22
15
6.5
28
19
13
4.5
0.4
0.4
0.83
210
280
390
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
1.2
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (900mm
2
0.8mm)
15
V
V
V
μ
A
pF
ns
Forward Voltage
0.30
0.35
0.35
0.40
500
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Therminal Resistance
42
15
110
°
C / W
Electrical Connection
(Top view)
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
PW=10
μ
s
D.C.
≤
1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
CPH5803
VIN
0V
4V
VIN
Duty
≤
10%
50
100
10
--5V
trr
1
1
1
10
μ
s
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
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