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參數(shù)資料
| 型號： | CPH6613 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CPH6613 |
CPH6613
No.8182-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with two MOSFETs contained in a single package facilitating high-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
20
±
12
2.5
10
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)1unit
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=0.8A, VGS=2.5V
ID=0.4A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
20
V
μ
A
μ
A
V
S
m
m
m
pF
pF
pF
1
±
10
1.3
0.4
2.0
3.4
70
95
130
270
60
53
95
135
198
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FZ
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8182
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
12505PE TS IM TB-00001086
CPH6613
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH6613-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2.5A CPH6 |
| CPH6614 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| CPH6614-TL-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SOT346 制造商:Sony Semiconductor Solutions Division 功能描述: |
| CPH6615 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:CPH6615 |
| CPH6615-TL-E | 功能描述:MOSFET N/P-CH 30V 2.5/1.8A CPH6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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