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參數(shù)資料
| 型號(hào)： | CQ89B |
| 英文描述： | TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 |
| 中文描述： | 可控硅| 200伏五（DRM）的| 1A條口（T）的有效值|采用SOT - 89 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 93K |
| 代理商： | CQ89B |
Ce nt ra l
S e m ico nd uct o r Co rp .
TM
252
CQ89D
CQ89M
CQ89N
2.0 AMP TRIAC
400 THRU 800 VOLTS
SOT-89 CASE
MAXIMUM RATINGS
(TC=25
o
C)
SYMBOL CQ89D CQ89M CQ89N UNITS
400
Peak Repetitive Off-State Voltage VDRM
RMS On-State Current (TC=80
o
C) IT(RMS)
Peak One Cycle Surge (10ms) ITSM
Peak Gate Current
Average Gate Power Dissipation PG(AV)
StorageTemperature
Junction Temperature
Thermal Resistance
600
2.0
10
1.0
0.1
800
V
A
A
A
W
IGM
Tstg
TJ
Θ
J-C
-45 to +150
-45 to +125
10
o
C
o
C
o
C/W
ELECTRICAL CHARACTERISTICS
(TC=25
o
C unless otherwise noted)
SYMBOL
IDRM
IDRM
IGT
IH
VGT
VTM
dv/dt
TEST CONDITIONS
VD=Rated VDRM
VD=Rated VDRM, TC=125
o
C
VD=12V, QUAD I, II, III, IV
VD=12V
VD=12V
IT=3.0A
VD=
23
VDRM, TC=125
o
C
MIN
TYP
MAX
5.00
200
25
25
UNITS
μ
A
μ
A
mA
mA
V
V
V/
μ
s
2.00
1.75
100
SOT-89
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CQ89BS | TRIAC|200V V(DRM)|2A I(T)RMS|SOT-89 |
| CQ89D | 2.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ89M | 2.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ89N | 2.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ92A | TRIAC|100V V(DRM)|800MA I(T)RMS|TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CQ89BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|200V V(DRM)|2A I(T)RMS|SOT-89 |
| CQ89D | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:2.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ89D_04 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:1.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ89DS | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:2.0 AMP TRIAC 400 THRU 800 VOLTS |
| CQ89M | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:2.0 AMP TRIAC 400 THRU 800 VOLTS |
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