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參數(shù)資料
| 型號(hào)： | CR04AM-8 |
| 英文描述： | CR04AM-8 CR04AM-12 Datasheet 116K/MAR.20.03 |
| 中文描述： | CR04AM - 8 CR04AM - 12數(shù)據(jù)116K/MAR.20.03 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | CR04AM-8 |
Sep.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
10
0
10
1
10
2
4.0
0
2.0
2.5
3.0
3.5
1.0
1.5
0.5
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
160
0
80
100
120
140
40
60
20
T
j
= 125
°
C
R
GK
= 1k
TYPICAL EXAMPLE
2 3
0
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
500
300
400
100
200
10
0
2 3
10
–1
5 710
0
2 3 5 710
1
2 3 5 710
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
D
= 100V
R
L
= 47
R
GK
= 1k
T
a
= 25
°
C
TYPICAL EXAMPLE
40
30
15
10
5
35
25
20
0
160
0
40
80
120 140
20
60
100
V
D
= 50V, V
R
= 50V
I
T
= 2A, R
GK
= 1k
TYPICAL EXAMPLE
DISTRIBUTION
60
–20
–40
–60
0
20 40
80 100120140
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
DISTRIBUTION
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
H
JUNCTION TEMPERATURE (
°
C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
1
H
G
)
H
G
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TURN-ON TIME VS. GATE CURRENT
T
μ
s
GATE CURRENT (mA)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
H
GATE TRIGGER CURRENT (
μ
A)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
T
μ
s
JUNCTION TEMPERATURE (
°
C)
T
j
= 25
°
C
T
j
= 25
°
C
I
GT
(25
°
C) = 35
μ
A
R
GK
= 1k
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I
GT
(25
°
C) I
H
(1k
)
# 1 25
μ
A 0.9mA
# 1
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相關(guān)代理商/技術(shù)參數(shù) |
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