參數(shù)資料
型號: CR12A
廠商: Electronic Theatre Controls, Inc.
英文描述: Amber 180 Angle Ceramic Chip
中文描述: 琥珀180角陶瓷芯片
文件頁數(shù): 4/7頁
文件大?。?/td> 107K
代理商: CR12A
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
–1
2 3
10
–4
5 710
–3
2 3 5 710
–2
2 3 5 710
–1
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
10
0
5 710
2
2 3 5 710
3
2 3 5 710
4
2 3
10
1
3
2
10
1
7
5
3
2
7
5
3
2
7
5
10
–1
V
FGM
= 6V
V
GT
= 1.5V
I
GT
= 30mA
P
GM
= 5W
V
GD
= 0.2V
I
FGM
= 2A
P
G(AV)
= 0.5W
160
60
–20
–40
0
20 40
80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
TYPICAL EXAMPLE
1.6
1.2
1.0
0.6
0.4
0
–40 –20
120
20
80
0.2
0.8
1.4
0
60
40
100
TYPICAL EXAMPLE
DISTRIBUTION
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
64
A
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
G
JUNCTION TEMPERATURE (°C)
G
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
INDUCTIVE
LOADS
C
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
T
TIME (s)
48
24
16
8
56
40
32
0
32
0
8
16
24
28
4
12
20
θ
= 30°
60°
120°
90°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
120
60
40
20
140
100
80
0
16
0
4
8
12
14
2
6
10
θ
360°
θ
= 30°
60°
90°
180°
120°
GATE CHARACTERISTICS
1
G
j
G
j
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