參數(shù)資料
型號: CR12AM-8
英文描述: CR12AM-8 CR12AM-12 Datasheet 110K/MAR.20.03
中文描述: CR12AM - 8 CR12AM - 12數(shù)據(jù)110K/MAR.20.03
文件頁數(shù): 3/7頁
文件大?。?/td> 107K
代理商: CR12AM-8
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
8
1.The contact thermal resistance R
th (c-f)
is 1.0
°
C/W with greased.
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
°
C, V
RRM
applied
T
j
=125
°
C, V
DRM
applied
T
c
=25
°
C, I
TM
=40A,
T
j
=25
°
C, V
D
=6V, I
T
=1A
T
j
=125
°
C, V
D
=1/2V
DRM
T
j
=25
°
C, V
D
=6V, I
T
=1A
T
j
=25
°
C, V
D
=12V
Junction to case
8
1
Unit
mA
mA
V
V
V
mA
mA
°
C/W
Typ.
15
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
0.2
Max.
2.0
2.0
1.6
1.5
30
1.2
10
0
2 3
5 7 10
1
160
80
2 3
5 7 10
2
4
4
240
320
400
120
40
0
200
280
360
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
c
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
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