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參數(shù)資料
| 型號： | CRCW120620R0F100 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 596K |
| 代理商： | CRCW120620R0F100 |
MW4IC001NR4 MW4IC001MR4
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
N Suffix Indicates Lead-Free Terminations
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
4.58
0.037
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case @ 85
°
C
R
θ
JC
27.3
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC001MR4
Rev. 3, 1/2005
Freescale Semiconductor
Technical Data
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001NR4
MW4IC001MR4
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CRCW120620R0F100RT1 | 制造商:Vishay Intertechnologies 功能描述: |
| CRCW120620R0F100RT6 | 制造商:Vishay Intertechnologies 功能描述: |
| CRCW120620R0FHEA0E | 制造商:Vishay Semiconductors 功能描述: |
| CRCW120620R0FKEA | 功能描述:厚膜電阻器 - SMD 1/4watt 20ohms 1% RoHS:否 制造商:Bourns 電阻:1.5 Ohms 容差:1 % 功率額定值:25 W 電壓額定值:250 V 外殼代碼 - in: 外殼代碼 - mm: 端接類型:SMD/SMT 溫度系數(shù):100 PPM / C 系列:PWR163 工作溫度范圍:- 55 C to + 155 C 封裝:Tube |
| CRCW120620R0FKEA | 制造商:VISHAY DRALORIC 功能描述:RESISTOR 1206 20R 1% FULL 制造商:VISHAY DRALORIC 功能描述:Thick Film Chip Resistor 制造商:VISHAY DRALORIC 功能描述:RESISTOR, 1206, 20R, 1%, FULL REEL 制造商:VISHAY DRALORIC 功能描述:RESISTOR, 1206, 20R, 1%, FULL REEL; Product Range:VISHAY - CRCW Series; Resistance:20ohm; Power Rating:250mW; Resistance Tolerance: 1%; Resistor Case Style:1206 [3216 Metric]; Resistor Element Material:Thick Film; Temperature ;RoHS Compliant: Yes |
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