CS5157
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12
typical application where VCC1 = VCC2 = 12 V and 5.0 V is
used as the source for the regulator output current, the
following gate drive is provided;
VGATE(H) + 12 V * 5.0 V + 7.0 V, VGATE(L) + 12 V
Figure 19. CS5157 Gate Drive Waveforms Depicting
Rail to Rail Swing
M 1.00 μs
Math 1 = VGATE(H) 5.0 VIN
Trace 3 = VGATE(H) (10 V/div.)
Trace 4 = VGATE(L) (10 V/div.)
Trace 2 Inductor Switching Nodes (5.0 V/div.)
The most important aspect of MOSFET performance is
RDSON, which effects regulator efficiency and MOSFET
thermal management requirements.
The power dissipated by the MOSFETs may be estimated
as follows;
Switching MOSFET:
Power + ILOAD2
RDSON
duty cycle
Synchronous MOSFET:
Power + ILOAD2
RDSON
(1 * duty cycle)
Duty Cycle =
VOUT ) (ILOAD
RDSON OF SYNCH FET)
VIN)(ILOAD
RDSON OF SYNCH FET)
* (ILOAD
RDSON OF SWITCH FET)
Off Time Capacitor (COFF)
The COFF timing capacitor sets the regulator off time:
TOFF + COFF
4848.5
When the VFFB pin is less than 1.0 V, the current charging
the COFF capacitor is reduced. The extended off time can be
calculated as follows:
TOFF + COFF
24, 242.5
Off time will be determined by either the TOFF time, or the
time out timer, whichever is longer.
The preceding equations for duty cycle can also be used
to calculate the regulator switching frequency and select the
COFF timing capacitor:
COFF +
Perioid
(1 * duty cycle)
4848.5
where:
Period +
1
switching frequency
Schottky Diode for Synchronous MOSFET
A Schottky diode may be placed in parallel with the
synchronous MOSFET to conduct the inductor current upon
turn off of the switching MOSFET to improve efficiency.
The CS5157 reference circuit does not use this device due
to it’s excellent design. Instead, the body diode of the
synchronous MOSFET is utilized to reduce cost and
conducts the inductor current. For a design operating at
200 kHz or so, the low nonoverlap time combined with
Schottky forward recovery time may make the benefits of
this device not worth the additional expense (see Figure
8,channel 2). The power dissipation in the synchronous
MOSFET due to body diode conduction can be estimated by
the following equation:
Power + VBD
ILOAD
conduction time
switching frequency
Where VBD = the forward drop of the MOSFET body
diode. For the CS5157 demonstration board as shown in
Power + 1.6 V
13 A
100 ns
233 kHz + 0.48 W
This is only 1.3% of the 36.4 W being delivered to the
load.
Input and Output Capacitors
These components must be selected and placed carefully
to yield optimal results. Capacitors should be chosen to
provide acceptable ripple on the input supply lines and
regulator output voltage. Key specifications for input
capacitors are their ripple rating, while ESR is important for
output capacitors. For best transient response, a combination
of low value/high frequency and bulk capacitors placed
close to the load will be required.
Output Inductor
The inductor should be selected based on its inductance,
current capability, and DC resistance. Increasing the
inductor value will decrease output voltage ripple, but
degrade transient response.
THERMAL MANAGEMENT
Thermal Considerations for Power
MOSFETs and Diodes
In order to maintain good reliability, the junction
temperature of the semiconductor components should be
kept to a maximum of 150°C or lower. The thermal
impedance (junction to ambient) required to meet this
requirement can be calculated as follows:
Thermal Impedance +
TJUNCTION(MAX) * TAMBIENT
Power