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參數(shù)資料
| 型號(hào)： | CSC1009R |
| 英文描述： | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 700MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管| npn型| 140伏特五（巴西）總裁| 700mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | CSC1009R |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
CSA709 PNP
CSC1009 NPN
TO-92
CBE
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
CSA709
160
150
8.0
700
800
-55 to +150
CSC1009
160
140
8.0
700
800
-55 to +150
UNIT
V
V
V
mA
mW
deg C
SYMBOL
VCBO
VCEO
VEBO
ICBO
TEST CONDITION
IC=100uA.IE=0
IC=10mA,IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VCB=100V, IE=0
VEB=5V, IC=0
IC=50mA,VCE=2V
CSA709
>160
>150
>8.0
CSC1009
>160
>140
>8.0
<100
-
<100
40-400
<0.7
<1.1
UNIT
V
V
V
nA
nA
nA
-
<100
<100
40-400
<0.4
<1.1
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
IEBO
hFE*
VCE(Sat)* IC=200mA,IB=20mA
VBE(Sat) * IC=200mA,IB=20mA
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Out-Put Capacitance
ft
Cob
IC=50mA, VCE=10V
VCB=10V, IE=0
f=1MHz
typ50
<10
>30
typ8.0
MHz
pF
*hFE CLASSIFICATION CSC1009
CSA709
*Pulse Test: PW=350us, Duty Cycle=2%
R : 40 - 80
-
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G: 200-400
G: 200-400
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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