參數(shù)資料
型號: CSPESD304
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: CSP-5
文件頁數(shù): 3/6頁
文件大小: 225K
代理商: CSPESD304
2005 California Micro Devices Corp. All rights reserved.
09/27/05
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
3
CSPESD304
Specifications
Note 1: TA=-40 to +85°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: These parameters are guaranteed by design and characterization.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
-65 to +150
°C
DC Package Power Rating
200
mW
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
°C
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VDIODE
Diode Reverse Breakdown Voltage
IDIODE = 10A5.5
V
ILEAK
Diode Leakage Current
VIN=3.3V, TA=25°C
100
nA
VSIG
Signal Voltage
Positive Clamp
Negative Clamp
IDIODE = 10mA
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
VESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Notes 2 and 3
+30
+15
kV
VCL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Notes 2 and 3
+15
-8
V
CDIODE
Diode Capacitance
At 2.5VDC Reverse Bias,
1MHz, 30mVAC
22
27
32
pF
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