參數(shù)資料
型號： CTLM1074-M832D
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類： 功率晶體管
中文描述： 1 A, 25 V, PNP, Si, POWER TRANSISTOR
封裝： 3 x 2 mm, ROHS COMPLIANT, 8 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 236K
代理商： CTLM1074-M832D
MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL
UNITS
Power Dissipation*
PD
1.65
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
76
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
1.0
A
Peak Repetitive Forward Current, tp<1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100μA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100μA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
75
mV
CTLM1074-M832D
MULTI DISCRETE MODULE
SURFACE MOUNT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY RECTIFIER
TLM832D CASE
Central
Semiconductor Corp.
TM
R1 (22-July 2008)
MARKING CODE:
CFD
TM
Bottom View
Top View
APPLICATIONS
Switching Circuits
DC / DC Converters
LCD Backlighting
Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
DESCRIPTION: The Central Semiconductor Corp.
CTLM1074-M832D consists of a Low VCE (SAT) PNP
Transistor and a Low VF Schottky Rectifier. Packaged
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where small
size, operational efficiency, and low energy
consumption are the prime requirements. Due to its
leadless package design this device is capable of
dissipating up to 4 times the power of similar devices in
comparable sized surface mount packages.
FEATURES
Dual Chip Device
High Current (1.0A) Transistor and Schottky Rectifier
Low VCE(SAT) PNP Transistor
(450mV @ IC = 1.0A Max)
Low VF Schottky Rectifier (550mV @ 1.0A Max)
High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
Small TLM 3x2mm Leadless Surface Mount Package
Complementary Device CTLM1034-M832D
*FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
相關(guān)PDF資料
PDF描述
CTLM3474-M832D
CTLM3410-M832D
CTLM7410-M832D
CWA2490H
CWA4850H
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CTLM1074-M832D_10 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT SILICON LOW VCE(SAT) PNP TRANSISTOR AND LOW VF SCHOTTKY RECTIFIER
CTLM3410-M832D 功能描述:兩極晶體管 - BJT SMD Small Signal Transistor Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
CTLM3474-M832D 功能描述:兩極晶體管 - BJT Small Sig Transistor Dual NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
CTLM7110-M832D 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
CTLM7410-M832D 功能描述:兩極晶體管 - BJT SMD Small Signal Transistor Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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