參數(shù)資料
型號(hào): CXK5B81020JM-12
廠商: Sony Corporation
英文描述: 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
中文描述: 131072字ⅴ8位高速雙CMOS靜態(tài)RAM
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 184K
代理商: CXK5B81020JM-12
– 4 –
CXK5B81020J/TM
Read cycle
Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
Write cycle
Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
t
RC
t
AA
t
CO
t
OE
t
OH
t
LZ
t
OLZ
t
HZ
t
OHZ
12
3
3
0
0
0
12
12
6
6
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Item
Symbol
Unit
-12
Min.
Max.
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
OW
t
WHZ
12
10
10
8
0
10
0
0
4
0
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Address valid to end of write
Chip enable to end of write
Data valid to end of write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from lend of write
Write to output in high Z
Item
Symbol
Unit
-12
Min.
Max.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK5B81020TM 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
CXK5B81020TM-12 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
CXK5T16100TM- 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 16-bit High Speed CMOS Static RAM
CXK5T16100TM-10LLX 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM
CXK5T16100TM-12LLX 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 16-bit High Speed CMOS Static RAM